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February 20, 2025
Under the background of the development of new energy industry to high voltage and high frequency, silicon carbide (SiC) power module integration technology is becoming the core innovation direction of power electronic systems. Through synergistic breakthroughs in material properties and packaging processes, this technology is reshaping the performance boundaries of energy conversion equipment. This paper will analyze the innovative value of silicon carbide power module integration from three dimensions of technical advantages, application practice and industrial trend.
1. The system efficiency and power density are significantly improved
Enhanced high-frequency operation capability
Integrated design supports high frequency switches above 100kHz by reducing parasitic inductance (which can be optimized to below 5nH). Compared with the discrete device solution, the switching loss of the silicon carbide power module is reduced by more than 70%, so that the conversion efficiency of the photovoltaic inverter exceeds 99%.
Volume and weight optimization
The integrated module uses double-sided heat dissipation (such as IPM package) and three-dimensional stacking technology, which increases the power density to 50W/cm³ and reduces the volume by 40% compared to traditional solutions. For example, TOLL package size is reduced by 30%, which is particularly suitable for micro inverters and on-board charging systems9.
2. Reliability and life extension
Thermal management breakthrough
The integrated module introduces AMB (active metal brazing) and silver sintering processes, reducing thermal resistance by 30%, and extending the operating temperature tolerance range to -55℃~175℃. For example, the silicon carbide boat bracket can withstand the temperature of 1600 ° C in the production of photovoltaic cells, and the service life is extended to more than 1 year98.
Improved anti-interference capability
Built-in drive circuit and electromagnetic shielding layer, effectively inhibit 100kV/μs dv/dt voltage mutation, electromagnetic interference (EMI) reduced by 20dB, meet the requirements of automotive electronics ISO 7637 standard 46.
3. Industrial chain coordination and cost optimization
Scale cost reduction effect
The integrated module improves material utilization by 25% through chip-package co-design. The cost of silicon carbide modules in 2024 is 40% lower than that of discrete schemes, and the price of fully integrated modules is expected to be close to 1.8 times that of silicon-based IGBTs in 2026.
Simplify installation and maintenance
The integrated design reduces the welding points by 50% and the wiring harness length by 30%, and the equipment assembly time by 60%. For example, the failure rate of the main drive inverter of new energy vehicles was reduced from 0.3% to 0.05%58.
4. Application scenario expansion
High voltage platform adaptability
The 1700V voltage integrated module has been matched with the 1500V photovoltaic system, supporting 480kW overcharge power, and reducing the line loss by 12%.
Harsh environment adaptability
After 10 years of accelerated aging test (high temperature/high humidity/salt spray), the failure rate is less than 0.1%/ thousand hours, suitable for desert photovoltaic power plants and offshore wind scenarios98.
Technological development trend
Heterogeneous integration: The "silicon + silicon carbide" hybrid module proposed by Tesla only increases the cost by 50-60%, but the efficiency is significantly improved, and has been applied in the pilot energy storage system9
Intelligent integration: Built-in temperature/current sensors and self-diagnostics enable predictive maintenance and reduce equipment downtime by 80%
The integration of power modules is promoting the iteration of new energy equipment in the direction of "high frequency, high density and high reliability", and the global market size is expected to exceed 8.9 billion US dollars in 2028.
